Molybdenum dichloride dioxide/MoO2Cl2

Application of MoO2Cl2

Molybdenum dichloride dioxide, a yellow diamagnetic solid, is a valuable precursor due to its reactivity and ability to form other molybdenum compounds. In the semiconductor industry, where precision and material purity are paramount, MoO₂Cl₂ could play a significant role, especially in the fabrication of NAND flash memory, a critical component in modern storage devices like SSDs, USB drives, and memory cards.

One exciting application in NAND technology is its use in depositing molybdenum-based layers, such as molybdenum metal or molybdenum oxides, which are emerging as alternatives to traditional materials. NAND flash memory relies on a 3D stacking architecture to increase storage density, with layers of conductive and insulating materials forming memory cells. Traditionally, tungsten has been used as a word line material due to its conductivity and thermal stability. However, molybdenum, which can be derived from precursors like MoO₂Cl₂, offers similar benefits—high conductivity, a high melting point, and compatibility with semiconductor processes—while potentially reducing costs or improving scalability.

Using a technique like chemical vapor deposition (CVD) or atomic layer deposition (ALD), MoO₂Cl₂ could serve as a volatile molybdenum source to deposit thin, uniform molybdenum films. In the CVD or ALD process, the compound’s oxychloride structure allows it to decompose or react with reducing agents (e.g., hydrogen) to form pure molybdenum metal or controlled oxide layers. These molybdenum films could replace or complement tungsten in the word lines of 3D NAND, providing excellent electrical conductivity to connect the memory cells while maintaining structural integrity during the high-temperature processing steps of semiconductor manufacturing.