Semiconductor Manufacturing

Organometallic compounds play a crucial role in semiconductor manufacturing, particularly in processes like Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD). Here’s a breakdown of their key applications:  

  1. Thin Film Deposition:
  • Semiconductor Layers: Organometallic compounds are used to deposit thin films of various semiconductors, such as:
    • Silicon: Used in transistors and integrated circuits.  
    • Gallium Arsenide (GaAs): Employed in high-frequency devices, LEDs, and solar cells.  
    • Indium Phosphide (InP): Utilized in fiber optic communication devices and high-speed electronics.  
  • Metal Layers:
    • Copper: Used for interconnects due to its high conductivity.  
    • Tungsten: Employed as a diffusion barrier and contact material.  
    • Aluminum: Used in various layers within integrated circuits.
  • Dielectric Layers:
    • Silicon Dioxide (SiO2): Acts as an insulator and passivation layer.  
    • Silicon Nitride (Si3N4): Used for gate dielectrics and as an etch mask.  
  1. Specific Applications:
  • Metal-Organic Chemical Vapor Deposition (MOCVD): A widely used technique for growing high-quality semiconductor layers, especially for compound semiconductors like GaAs and InP.
  • Atomic Layer Deposition (ALD): Enables precise control over film thickness at the atomic level, crucial for advanced semiconductor devices.  

Key Properties of Organometallic Compounds for Semiconductor Manufacturing:

  • High Purity: Essential to minimize defects and ensure device performance.
  • Volatility: Allows for easy vaporization and transport in CVD/ALD systems.
  • Thermal Stability: Should decompose or react at appropriate temperatures during deposition.
  • Reactivity: Should react selectively to form the desired thin film.
  • Safety: Must be handled safely to avoid hazards like flammability and toxicity.

Examples of Gaschem’s Organometallic Compounds Used in Semiconductor Manufacturing:

  • Trimethylaluminum (TMA): Used for depositing aluminum-containing films.
  • Trimethylgallium (TMGa): Used for depositing gallium-containing semiconductors.
  • Tetrakis(dimethylamino)titanium (TDMAT): Used for depositing titanium nitride (TiN) films.  
  • Bis(cyclopentadienyl)magnesium (Cp2Mg): Used for depositing magnesium-containing films.  
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