Key Points
- Research suggests molybdenum in Lam Research’s ALTUS Halo machine reduces resistance by 50% compared to tungsten, enhancing chip speed.
- It seems likely that molybdenum eliminates the need for barrier layers, simplifying production and potentially improving performance.
- The evidence leans toward molybdenum being better suited for advanced NAND, DRAM, and logic devices, addressing scaling limits of tungsten.
- This technology is already in use by Micron for NAND and is being adopted by South Korean chip-makers, with future applications in logic and DRAM.
Overview
Lam Research’s new ALTUS Halo machine, using molybdenum for atomic layer deposition (ALD), marks a significant advancement in semiconductor manufacturing. This technology promises faster chip applications and could reshape how chips are produced for modern devices.
Technology and Benefits
The ALTUS Halo machine replaces tungsten with molybdenum, which research suggests reduces resistance by 50%, ultimately speeding up chip applications. Unlike tungsten, molybdenum doesn’t require additional barrier layers, which can narrow electron pathways and increase resistance. This elimination simplifies the manufacturing process and may enhance conductivity by allowing wider electron pathways.
Industry Adoption
Micron is already using ALTUS Halo for NAND production, and South Korean chip-makers are preparing to adopt it this year. Looking ahead, it’s expected to extend to logic and DRAM, potentially transforming these sectors.
Unexpected Detail: Development Timeline
An interesting aspect is that Lam Research spent seven years optimizing the machine, tackling challenges like vaporizing molybdenum’s solid precursors, which is more complex than handling tungsten’s liquid precursors.
Survey Note: Detailed Analysis of Lam Research’s Molybdenum ALD Machine
Lam Research’s introduction of the ALTUS Halo machine, utilizing molybdenum for atomic layer deposition (ALD) in semiconductor manufacturing, represents a pivotal shift in the industry, particularly for advanced NAND, DRAM, and logic devices. This section provides a comprehensive examination of the technology, its implications, and its adoption, drawing from recent developments and technical insights.
Background and Context
Semiconductor manufacturing relies heavily on ALD for depositing thin films in chip production, crucial for creating the intricate structures in modern devices. Tungsten has been the industry standard for over two decades, particularly in metallization for NAND, DRAM, and logic applications, as noted in a recent press release from Lam Research (Lam Research Press Release). However, as devices scale down, tungsten-based ALD faces limitations, prompting the exploration of alternative materials like molybdenum.
Technological Advancements
The ALTUS Halo machine, unveiled at Semicon Korea 2025 in Seoul, leverages molybdenum, which offers several advantages over tungsten. According to Lam Research Director Tae-Soon Park, molybdenum reduces resistance by 50% compared to tungsten, a critical factor for enhancing chip speed and efficiency (THE ELEC). This reduction is attributed to molybdenum’s slightly lower resistivity, approximately 5.2 × 10^-8 Ω·m at 20°C, compared to tungsten’s 5.6 × 10^-8 Ω·m, as confirmed by engineering resources (Engineering Toolbox). However, the 50% resistance reduction likely stems from structural benefits, such as the absence of barrier layers, which tungsten requires to prevent diffusion or maintain electrical stability.
Tungsten-based circuits often include barrier layers, such as TaN, to prevent issues like copper diffusion in interconnects, as detailed in academic studies (ScienceDirect). These layers can narrow electron pathways, increasing effective resistance. Molybdenum, conversely, does not necessitate these layers, potentially simplifying the process and allowing wider electron pathways, thus reducing resistance further. This is supported by Lam Research’s claim that molybdenum provides low-resistivity, void-free metallization, enhancing performance in scaled devices (Lam Research Product Page).
A notable challenge in molybdenum deposition is its solid precursors, unlike tungsten’s liquid ones, requiring vaporization, which Lam Research addressed through seven years of optimization, focusing on temperature, gas flow, and byproduct management (Simply Wall St News).
Industry Adoption and Future Prospects
The ALTUS Halo is already in use by US chip giant Micron for NAND production, marking its entry into high-volume manufacturing, as reported in Lam Research’s press materials (Lam Research Press Release). South Korean chip-makers, including major players like Samsung and SK Hynix, are preparing to apply this technology this year, aligning with their plans for new process nodes, as noted in industry news (TipRanks Article). Looking forward, Lam Research’s Corporate Vice President Kaihan Ashtiani emphasized that molybdenum-based ALD will extend to logic and DRAM, promising broader applications in the semiconductor ecosystem (Markets Insider).
Comparative Analysis: Molybdenum vs. Tungsten
To illustrate the differences, consider the following table comparing key properties:
Property | Molybdenum | Tungsten |
---|---|---|
Resistivity at 20°C (Ω·m) | 5.2 × 10^-8 | 5.6 × 10^-8 |
State of Precursors | Solid (vaporized) | Liquid |
Barrier Layers Required | No | Yes |
Resistance Reduction | 50% lower than W | Baseline |
This table highlights molybdenum’s advantages, particularly in resistance and process simplicity, which are critical for meeting the scaling demands of modern chips.
Implications for Semiconductor Industry
Molybdenum’s adoption could significantly impact the industry, enabling continued adherence to Moore’s Law by facilitating greater interconnect scaling. Its lower resistivity and compatibility with existing processes, including ALD and chemical-mechanical planarization (CMP), position it as a promising candidate, as discussed in industry analyses (BALD Engineering Blog). This shift may reduce manufacturing complexity, lower costs, and enhance device performance, particularly for AI, cloud computing, and next-generation smart devices, as outlined in Lam Research’s announcements (Yahoo Finance).
Challenges and Considerations
While molybdenum offers clear benefits, challenges remain, such as its higher dissolution rate during CMP, which can affect surface flatness, as noted in research (ScienceDirect). However, strategies like catalytic-oxidation are being explored to mitigate these issues, suggesting ongoing innovation in the field.
Conclusion
Lam Research’s ALTUS Halo machine, with its molybdenum-based ALD, represents a significant leap forward in semiconductor manufacturing, addressing the limitations of tungsten and paving the way for advanced chip technologies. Its adoption by major players and potential for broader applications underscore its importance in the industry’s future, aligning with the needs of an increasingly connected and data-driven world.
Key Citations
- Lam Research Press Release Detailed Analysis of ALTUS Halo
- TipRanks Article on Lam Research ALTUS Halo Unveiling
- Lam Research Product Family Information Including ALTUS
- PR Newswire Announcement of ALTUS Halo for Molybdenum ALD
- Markets Insider News on Lam Research ALTUS Halo Launch
- Simply Wall St News on Lam Research Breakthroughs with Akara and ALTUS Halo
- Yahoo Finance Report on Lam Research Semiconductor Metallization Era
- THE ELEC Coverage of Lam Research Molybdenum ALD Machine
- Engineering Toolbox Resistivity and Conductivity Data for Materials
- ScienceDirect Article on Tungsten Nitride Films as Cu-Diffusion Barrier
- BALD Engineering Blog on Molybdenum as New Frontier in Semiconductors